適用于 IGBT/SiC FET 且具有 2 級關斷的 5.7kVrms ±10A 單通道隔離式柵極驅動器
Number of channels (#)
1
Isolation rating (Vrms)
5700
Power switch
IGBT, SiCFET
Peak output current (A)
10
DIN V VDE V 0884-10 transient overvoltage rating (Vpk)
8000
DIN V VDE V 0884-10 working voltage (Vpk)
2121
Output VCC/VDD (Max) (V)
33
Output VCC/VDD (Min) (V)
13
Input VCC (Min) (V)
3
Input VCC (Max) (V)
5.5
Prop delay (ns)
90
Operating temperature range (C)
-40 to 125
Undervoltage lockout (Typ)
12
5.7-kVRMS single channel isolated gate driver
SiC MOSFETs and IGBTs up to 2121Vpk
33-V maximum output drive voltage (VDD-VEE)
±10-A drive strength and split output
150-V/ns minimum CMTI
270-ns response time fast overcurrent protection
Internal 2-level turn-off when fault happens
Isolated analog sensor with PWM output for
Temperature sensing with NTC, PTC or thermal diode
High voltage DC-Link or phase voltage
Alarm FLT on over current and reset from RST/EN
Fast enable/disable response on RST/EN
Reject <40-ns noise transient and pulse on input pins
12-V VDD UVLO with power good on RDY
VDD UVLO 12 V
Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
SOIC-16 DW package with creepage and clearance distance > 8 mm
Operating junction temperature –40°C to 150°C
The UCC21732 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21732 has up to ±10-A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , >150V/ns common mode noise immunity (CMTI).
The UCC21732 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers? versatility and simplifying the system design effort, size and cost.